Recent Research on Non-Lithographic Fabrication of Ni-Se Heterojunction Nanowires and Their Electrical Characterization

In this paper, Ni-Se heterojunction nanowires are produced via the process of template-assisted electrodeposition. Scanning electron microscopy (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), X-ray diffractometry and electrical transport studies characterise nanowires. The uniform and dense growth of Ni-Se nanowires is revealed by SEM photographs. The crystalline nature of Ni-Se nanowires is shown by the pattern of X-ray diffraction. The much higher proportion of Ni compared to Se is demonstrated by the EDS spectrum. The resonant tunnelling diodes (RTDs) illustrate a collective current-voltage characteristic of heterojunction nanowires as a conduct with a peak to valley current ratio of 1.37 at room temperature. This technique is ideal for synthesising the desired diameter and duration of mono dispersive nanowires. Peak current, which is a significant feature, is observed at low voltage and provides the possibility of creating electronic devices with low power dissipation.

Author(s) Details

Kanchan Kumari
Department of Electronics and Communication Engineering, Punjab Technical University/ BBSBEC, Fatehgarh Sahib, Punjab, India.

Vijay Kumar
Department of Material Science and Engineering, Punjab Technical University/ PCET, Lalru Mandi, Punjab, India.

Karamjeet Singh
Department of Electronics and Communication Engineering, Punjab Technical University/ BBSBEC, Fatehgarh Sahib, Punjab, India.

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