Assessing the Impact of Phonon-assisted Tunneling on Electronic Conductivity in Graphene Nanoribbons and Oxides Ones

The Phononon-assisted tunnelling (PhAT) model is used for the description of temperature-dependent conductivity and I-V characteristics measured for graphene nanoribbons and oxides by different investigators. Not only current temperature dependence, but also temperature-dependent I-V data are well represented in the proposed model using the same set of parameters characterising the material under investigation. With the phononon-assisted tunnelling theory, the values of active phonon energy and field strength for tunnelling are calculated from the fit of current temperature dependence and I-V/T results.

Author (s) Details

Professor Povilas Pipinys
Department of Physics, Vilnius Pedagogical University, Vilnius, Lithuania.

Dr. Antanas Kiveris
Department of Physics, Vilnius Pedagogical University, Vilnius, Lithuania.

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