The electronics sector has set new objectives for using nanotechnology to provide better solutions. For the development of optoelectronic devices, nanoelectronics has concentrated on the structural, optical, magnetic, and photoluminescence properties of nanomaterials. In comparison to bulk molecules, these features are extremely important at the nanoscale. Semiconductor materials have long been in high demand. The structural and optical features of rare earth-doped ZnO nanostructures are the subject of this paper. Sol gel was used to make nanoparticles of ZnO doped with Terbium ion. X-ray diffraction, high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and EPR studies were used to conduct systematic structural analyses on Tb3+ ion doped ZnO nanocrystals. These nanoparticles were also subjected to X-Ray photoelectron spectroscopy and EPR studies spectroscopic measurements in order to investigate the surface property changes caused by rare earth inclusion. The addition of Tb3+ ions resulted in an increase in broad band luminescence, which might be used to fabricate display devices with the requisite luminosity. The EPR analysis reveals that the type of surface defects varies depending on the amount of Tb doped in the ZnO nanoparticles.
Department of Sciences and Humanities, Room no. A017, Aryabhatt Building, K. J. Somaiya College of Engineering, Somaiya Vidyavihar University, Vidyavihar (E), Mumbai-400077, India.
V. N. Rai
School of Physics, Devi Ahilya Vishwavidyalay, Takshashila campus, Khandwa Road, Indore, M.P-452001, India.
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