Study of GaAs-Based Dilute Nitride Materials Grown by Liquid Phase Epitaxy
This study discusses the creation and characterisation of monocrystalline dilute nitride InGaAs(Sb)N and GaAsSbN layers using liquid phase epitaxy (LPE) in the context of solar applications. The low-temperature form of the LPE method is utilised to create high-quality epitaxial layers without phase separation. Scanning electron microscopy is used to characterise the samples’ structural properties. X-ray diffraction measurements, energy dispersive X-ray spectroscopy, and microscopy Photoluminescence (PL) spectroscopy is used to investigate the optical bandgap at low and room temperatures. The optical absorption edge is determined using surface photovoltage spectroscopy (SPV). The band gap of GaAsSbN is smaller than that of InGaAs(Sb)N in both PL and SPV spectra, which is important for solar cell applications.
Author(s) Details
V. Donchev
Faculty of Physics, Sofia University, 5, blvd. J. Bourchier, BG-1164, Sofia, Bulgaria.
Dr. M. Milanova
Central Laboratory of Applied Physics, Bulgarian Academy of Sciences, 61, St. Petersburg blvd., 4000 Plovdiv, Bulgaria.
S. Georgiev
Faculty of Physics, Sofia University, 5, blvd. J. Bourchier, BG-1164, Sofia, Bulgaria.
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