Determining the Effect of O2-partial Pressure on the Physical Properties of DC-magnetron Sputtered Cadmium Zinc Oxide thin Films

Solar cells and optoelectronic devices use Cd-doped ZnO in a variety of ways. To create Cd-doped ZnO thin films, researchers employed reactive dc magnetron sputtering on a glass substrate at various O2 partial pressures (1-3sccm). XRD was used to determine the structure of the compound, FE-SEM was used to explore the microstructure, a UV-Vis-NIR spectrometer was used to measure the absorption spectra, and the four probe method was used to investigate the electrical properties. The hexagonal wurtzite structure in (002) orientation was confirmed by XRD tests, as was the crystallite size of 14.08nm at 2.0sccm of PO2. This study looked at how the optical band gap changed over time. When PO2=2.0 sccm, the minimum resistivity is found.

Author(S) Details

A. Guru Sampath Kumar
Department of Physics, Malla Reddy Engineering College(A), Hyderabad-500100, T.S., India.

L. Obulapathi
Department of Physics, Annamacharya Institute of Tech. & Sci.’s, Rajampet-516127, A.P., India.

P. Siva Kumar
Department of Physics, Malla Reddy Engineering College(A), Hyderabad-500100, T.S., India.

V. S. Samyuktha
Department of Physics, Maris Stella College (Autonomous), Vijayawada-520008, A.P., India.

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