Utilizing ultraviolet photons from a KrF- laser ( = 248 nm), nanometric chromium oxide sheets of varying thickness, stoichiometry, and electrical properties were created. For the synthesis, reactive pulsed laser deposition (RPLD) was used as the foundation (RPLD). Film deposition was carried out between 293 and 800 K on a 100>Si substrate. XRD measurements show that films deposited on a Si substrate exhibit polycrystalline structure. All films demonstrated semiconductor temperature behaviour with a changeable band gap (Eg) less than 1.0 eV, depending on the substrate temperature, oxygen pressure in the reactor, and film thickness. It was investigated how the oxygen pressure, substrate temperature, and laser pulse frequency related to film thickness (55–200 nm). It was discovered that the ideal thermoelectric figure of merit (ZT) in the region of (280-330 K) was high as 0.23-5.0 and the ideal thermal electromotive force coefficient (Seebeck coefficient, S) was high as (3.0-8.0) mV/K. This made the UV-based RPLD technique used to make Cr3-XO3-Y nanometric films a very strong candidate for effective thermo-sensors and thermo-converters functioning at moderate temperatures. As a result, the primary goal of the research presented in this study is to identify the prerequisites for improving the thermoelectric properties of nanometric chromium oxide films.
National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG-54, RO-77125, Magurele, Romania.
S. A. Mulenko,
G.V. Kurdyumov Institute for Metal Physics NAS of Ukraine, 36, Vernadsky Blvd, Kyiv UA-03142, Ukraine.
N. T. Gorbachuk,
Kiev State University of Technology and Design, Kyiv UA-03011, Ukraine.
Please see the link here: https://stm.bookpi.org/COSTR-V4/article/view/8279
Keywords: Chromium oxides, thin films, laser synthesis, sensors, thermo-converters