Luminescence properties of defects in GaN
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. 
The current status of luminescence nanothermometry is reviewed in detail. Based on the main parameters of luminescence including intensity, bandwidth, bandshape, polarization, spectral shift and lifetime, we initially describe and compare the different classes of luminescence nanothermometry. 
Luminescence degradation in porous silicon
We have studied the stability of the luminescence from porous Si in the presence of a variety of ambient gases (e.g., N2, H2, forming gas, and O2). Although the optical properties are fairly stable under most conditions, illumination in the presence of O2 causes a substantial decrease in luminescence efficiency. 
Effect of Tb3+ Doping Concentration on Luminescent Properties of Sr3B2O6 Phosphor
The Sr3B2O6:Tb3+ phosphors with different concentration of Tb3+ were prepared by combustion method combination with heating at high-temperature. Results of the crystalline structure measurement indicate that the Sr3B2O6:Tb3+ phosphors have a Rhomboidal single phase. The excitation spectra show that the phosphors can be excited by ultraviolet light of near 379 nm. The emission spectra under 379 nm excitation includes several narrow lines, which is 5D4- 7 Fj (j = 2, 3, 4, 5, 6) transitions of Tb3+ ion in the lattice. 
Luminescence Spectral Changes of Solid EuCl3•6H2O Under N, N–Dimethylformamide and Methanol Vapors
Luminescence spectral changes of solid EuCl3·6H2O in the presence of N, N– dimethylformamide (DMF) and methanol (MeOH) vapors were studied. Difference spectra and 2 dimensional correlation spectra obtained from luminescence spectra were used to determine base components of the luminescence bands, and band intensities were obtained using deconvolution procedure with curve fitting technique. Spectral changes were explained using relative intensities of bands. 
 Reshchikov, M.A. and Morkoç, H., 2005. Luminescence properties of defects in GaN. Journal of applied physics, 97(6), pp.5-19.
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 Tischler, M.A., Collins, R.T., Stathis, J.H. and Tsang, J.C., 1992. Luminescence degradation in porous silicon. Applied Physics Letters, 60(5), pp.639-641.
 Van Tuyen, H., Son, N.M. and Quang, V.X., 2014. Effect of Tb 3 Doping Concentration on Luminescent Properties of Sr3B2O6 Phosphor. British Journal of Applied Science & Technology, 4(32), p.4511.
 Rabor, J.B., Yoshidome, T., Mitsushio, T., Yoshida, K., Sarno, B.J. and Higo, M., 2013. Luminescence Spectral Changes of Solid EuCl3• 6H2O Under N, N–Dimethylformamide and Methanol Vapors. International Research Journal of Pure and Applied Chemistry, pp.159-181.