This paper reports on 3C-SiC low-doped drain power MOSFET design and simulation, including key parameters such as the model of avalanche effect ionisation and its relationship to breakdown voltage, the doping dependence…
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This paper reports on 3C-SiC low-doped drain power MOSFET design and simulation, including key parameters such as the model of avalanche effect ionisation and its relationship to breakdown voltage, the doping dependence…